A high-performance MBE-grown AlGaAs/GaAs-based heterostructure optothyristor has been fabricated and characterized for high-power pulsed switching applications. An LEC undoped semi-insulating GaAs of 650 mu m in thickness was used as the voltage blocking layer and low-temperature GaAs grown at 200 degrees C was used to passivate the surface and to reduce the surface leakage current. The dynamic current-voltage characteristics have been measured up to 115 A and 1974 V, which corresponds to a field intensity of more than 30 kV/cm. The dissipated energy per switching as a function of device voltage has also been determined to be in the range of 2 mJ or lower.>
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Zhao et al. (1992) studied this question.
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