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The authors demonstrate that by lowering deposition temperature of ZnMnO films (T<500°C) they can avoid Mn clustering and creation of inclusions of Mn oxides, which are frequently formed in ZnMnO layers grown by high temperature methods. Low temperature growth is achieved using atomic layer deposition and organic zinc and manganese precursors.
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Wójcik et al. (2006) studied this question.
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