Influence of a constant current on Raman spectra of high mobility superlattices

A constant current in a semiconductor high mobility superlattice is shown to lead to a shift and broadening of the intrasubband plasmon loss peaks in the Raman spectrum. By a model calculation for GaAs-AlGaAs we find that the simple homogeneous drift approximation is not valid in the high current regime where the drift velocity of electrons is of the order of the Fermi velocity.