We have measured absorption of terahertz radiation pulses by metal-oxide-semiconductor (MOS) inversion layers and thereby determined carrier mobility without the need for source and drain contacts. This has allowed for the determination of inversion layer mobility prior to subsequent high temperature processing. An unannealed MOS sample was found to have a mobility value of 400 cm2/V s, which increased to 700 cm2/V s after a 950 °C anneal.
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Son et al. (1996) studied this question.