We investigated the conduction mechanism of a Ta2O5/TiO2-stacked resistance random access memory (ReRAM) device and found that its highly resistive state can be attributed to tunnel barriers induced in the filament, since single-electron tunneling phenomena was observed in the current–voltage characteristics at low temperatures and the resistance depended only slightly on temperature. We also found that the largest tunnel barrier, whose resistance is more than 1000 times larger than the second largest one, is located at the interface between the Ta2O5layer and TiO2layer and that variation in the resistance was caused by variation in the tunnel barrier width.
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Sakotsubo et al. (2010) studied this question.
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