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The resistance switching mechanism of TiO2 films under voltage sweep mode was investigated. From the observed soft set of Pt∕TiO2∕Pt sample and from the polarity-dependant switching behavior of Ir(O)∕TiO2∕Pt sample, local rupture and recovery of conducting filaments near the anode interface wer identified as the switching mechanism. This is consistent with the authors’ recent observation K. Kim et al., Electrchem. Solid-State Lett. 9, G343 (2006) of the resistance switching property of Al2O3∕TiO2 multilayers, where switching was controlled by the layer close to the anode. It appears that most parts of the filaments are preserved during switching and only a small portion of the film near the anode contributes to switching.
Kim et al. (Mon,) studied this question.
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