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A multiple-layer thin film of Pt/Ga 2 O 3−x /SiC/Pt-based resistive switching is systematically investigated. Excellent bipolar resistive switching behavior is observed with a high resistance switching ratio of OFF/ON up to 10 3 . The current–voltage relations plot implies the Ohmic conductance of the ON state, while the space and interface charge limited the current of the OFF state. The micro mechanism of resistive switching is explained by the formation/rupture of conductive filaments formed out of oxygen vacancies within the Ga 2 O 3−x and SiC region. In particular, these devices exhibit excellent stability. The high OFF/ON resistance ratio can be completely retained for a number of days without degradation.
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Shen et al. (2020) studied this question.
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