Dibarium Magnesium Diphosphate Yellow Phosphor Applied in InGaN-based LEDs

An efficient yellow-emitting phosphor, Eu2+-doped Ba2Mg(PO4)2, is reported. Its excitation band is extending from 250 to 450 nm, which is adaptable to the emission band of near-UV LED chips (350–420 nm). Upon 367-nm light excitation, the phosphor exhibits a strong yellow emission centered at 576 nm. A bright yellow LED was fabricated by incorporating the phosphor with an InGaN-based NUV chip. All the characteristics suggest that Ba2Mg(PO4)2:Eu2+ is a good yellow phosphor candidate for creating white light in phosphor converted white LEDs.