We have developed an addition to the Steinberg–Guinan high strain-rate constitutive model that extends its validity to strain rates as low as 10−4 s−1. With this new model, we have successfully reproduced a number of rate-dependent, shock-induced phenomena in tantalum, such as precursor on reshock, precursor decay, and shock smearing. We have also successfully calculated a plate-impact experiment at a loading stress of 230 GPa as well as extensive data for yield strength versus strain rate at room temperature and yield strength versus temperature at a strain rate of 10−4 s−1.
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Steinberg et al. (1989) studied this question.
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