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Fullerene thin film is fluorinated by a cold cathode DC discharge of CF4 gas. From the measurement of a laser-desorption time-of-flight mass spectrometer, it is confirmed that the surface of fullerene film becomes fullerene fluoride such as C60F x (x=15-51), and that C60F33 has the largest intensity. It is believed that fluorination is performed by F radicals and F - ions in the plasma. This fluorination method is safe and is attractive for producing fullerene fluoride film on solid substrates.
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Mieno et al. (1995) studied this question.
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