Inclusion of Mechanical Stress Effects in a Compact MOSFET Model

The analog performance of integrated circuits relies on stable parameters of its transistors. Mechanical stress changes the electronic properties of silicon and therefore, also the device parameters. For circuit design a good model of these effects is needed for a predictable and reliable function of the circuits. This article extracts the changes of various MOSFET parameters under effect of mechanical stress. A compact description of the stress effects is derived by applying tensors of piezo coefficients. The deviations are included in the physically based compact EKV model. A comparison with measured data shows that the stress effects are modelled correctly within a 10 % error margin.