Al-free active-region (λ = 805 nm) diode lasers with 1 µm thick InGaP waveguide layers provide continuous wave powers as high as 8.8 W from 1.25 mm long devices with 4%/95% facet-coating reflectivities and 100 µm wide stripes. The transverse beam pattern is Gaussian-like with a 36° beamwidth and the series resistance is only 48 mΩ.
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Wade et al. (1998) studied this question.