Injection transistor logic (ITL): new bipolar low-power inverter

We investigate the characteristics of a new injection transistor logic (ITL) fabricated by vapour-phase epitaxy and ion implantation. The maximum current gain of the Si-ITL inverter is about 150. The propagation delay tpd was determined by the ring oscillator and maximum frequency method. At a power of 100 μW per gate for this inverter, tpdis about 500 ps and 850 ps for 60 μW. In the high-speed ITL structure tpdis about 300 ps for 120 μW.