The chemical transport rates and crystal Morphology of GeSe

Mass transport rate studies on the system GeSeGeI4 were performed in closed ampules of fused silica in the temperature gradients 520 → 420°C, 420 → 350°C and 380 → 300°C with GeI4 pressures ranging from 0 to about 2 atm. The experimental results in terms of material flux versus GeI4 pressure reveal the different transport modes in agreement with SCHÄFER'S transport models. Comparison of observed and computed material fluxes based on a diffusion model confirmed the transport reaction Diffusion controlled chemical transport yields single crystal platelets with (001) orientation of the as‐grown surfaces, in accordance with the structural properties of GeSe.