Growth and Some Electrical Properties of Orientated Fibriform Crystal of SbSI

The dielectric and piezoelectric properties of the orientated fibriform crystal of SbSI grown by the Bridgeman method under high pressure, have been investigated. As-grown fibriform crystal of SbSI is an aggregate of many densely packed single crystalline needles orientated nearly parrallel to ingot axis which is ferroelectric axis (c-axis). The dielectric constant (ε 33 T is about 6400 at the Curie point (10°C). The electro-mechanical coupling factor (k 33) shows a high value of about 70–74% constantly in range of temperature from -50 to -10°C and rapidly decreases near the Curie point. The piezoelectric modulus (d 33) shows the highest value of 8×10-10 (C/N) near the Curie point. The temperature dependence of the frequency constant (f×l), elastic compliance co-efficnents (S 33 D, S 33 E), spontaneous polarization (P s3) and chemical analysis are discussed.