Low-threshold 1317-nm InGaAsN quantum-well lasers with GaAsN barriers

Very low threshold-current-density InGaAsN quantum-well lasers with GaAsN barriers, grown using metalorganic chemical vapor deposition, have been realized with a room-temperature emission wavelength of 1317 nm. The GaAsN barriers are employed to extend the wavelength, to strain compensate the quantum well, and to improve the hole confinement inside the quantum well. RT threshold current densities of only 210–270 A/cm2 are measured for InGaAsN quantum-well lasers (Lcav=1000–2000 μm) with an emission wavelength of 1317 nm.