GaInAsN/GaAsN/AlGaAs double quantum well lasers with emission at 1.49 µm grown by solid source molecular beam epitaxy is investigated. The devices show the lowest threshold currents (120 mA) and highest output powers (130 mW pulsed) reported to date for GaAs-based 1.5 µm lasers.
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Gollub et al. (2002) studied this question.
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