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Improvement of the output parameters of 2.3 µm GaSb-based laser diodes was observed with increase of the quantum-well compressive strain. A continuous-wave (CW) power of 1.15 W and quasi-CW power of 1.4 W were obtained at room temperature from 2 mm-long single emitters with a 100 µm-aperture.
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Donetsky et al. (2007) studied this question.
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