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We provide an update on the further development of optically pumped semiconductor lasers based on the InAs∕InGaSb∕InAs type-II quantum wells. We show increased power generation, as well as the inherent flexibility to produce devices that can emit at any wavelength in the ∼2.4μm to ∼9.3μm range with consistently high photon-to-photon conversion rates.
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Kaspi et al. (2006) studied this question.
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