A Vacum Evaporated Random Access Memory

The basic miultiple-layer magnetic thin film structure described here has been shown to have special and desirable properties in coincident-signal switching applications such as those employed in binary random access memories. Its demonstrated advantages in this application include: 1) magnetic turnover times as low as 30m μsec; 2) wide latitude in selection currents, with greater than twelve-fold variations giving no appreciable change in the compensated signal-to-noise ratio of the cell's output; 3) extremely small volume of, typically, 0.025 inch ×0.010 inch ×0.0007 inch per complete cell; and 4) automated, microminiaturized production and assembly based on vapor phase handling techniques.