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It is shown that the Berglund method for determining the metal-insulator-semiconductor surface potential relaxation as the structure voltage changes is valid only in the absence of convective currents in the insulator. A method for determining the potential relaxation in the presence of convective currents is suggested. The currents induced in the structure due to changes in the contact potential difference during temperature variations are also considered.
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S. G. Dmitriev (2011) studied this question.
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