Excimer laser‐assisted metalorganic vapor phase epitaxy of CdTe and HgTe on (100) GaAs

The growth of CdTe and HgTe by excimer laser‐assisted metalorganic vapor phase epitaxy on (100) GaAs at 165 °C is reported. HgTe layers have been grown on a 4000‐Å buffer layer of CdTe on GaAs with the use of dimethylmercury and a new Hg‐containing source material, divinylmercury. A linear dependence of CdTe growth rate on laser power and reactant partial pressure has been observed using in situ time‐resolved reflectivity. The photodissociation mechanism for diethyltellurium (DETe) has been investigated using laser induced fluorescence. Results indicate that irradiation of DETe with 248‐nm photons produces ground‐state Te atoms by a single‐photon process.