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The performance of the planar magnetron sputtering apparatus with the use of a c -axis oriented single-domain Sm123 bulk superconductor with 60 mm in diameter is discussed. A high magnetic field of 4.2 T at the surface of the superconductor coupled with a high electric field of maximum 6 kV enabled us to discharge even at the Ar gas pressure of 1 × 10 −3 Pa. A target-to-substrate distance could be extended to 30 mm under low pressures of 10 −2 –10 −3 Pa to allow the deposition with an incidence angle normal to a substrate. The discharging characteristics of Cu, Ni, Fe, Al and carbon targets in the pressure range over 10 −1 to 10 −3 Pa were studied under different target voltages. The deposition rates of 0.063 nm s −1 (or 38 Å min −1 ) and 0.013 nm s −1 (or 8 Å min −1 ) were achieved for Cu and Fe targets with 3 mm in thickness, respectively, under the Ar pressure of 6.6 × 10 −2 Pa.
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Mizutani et al. (2003) studied this question.
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