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September 10, 2026Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Understanding sidewall passivation composition of single-step non-Bosch processes for deep Si etch using alternative gas mixtures

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Authors

RARicha AgrawalNMNathan MarchackRGRosa Goss

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Overview

Experimental study demonstrates that adding boron trichloride alters sidewall passivation during deep silicon etching, highlighting sustainable plasma chemistries for microchip packaging.

Key Points

  • To investigate the chemical role of boron trichloride (BCl3) additive in alternative gas mixtures for sidewall passivation during single-step non-Bosch deep silicon etching.
  • Evaluated a single-step non-Bosch etching process using a sustainable CH4-C4F6-BCl3-SF6 gas mixture.
  • Analyzed the sidewall passivation film composition and structure using time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and x-ray photoelectron spectroscopy (XPS).
  • Addition of BCl3 additive significantly reduced the fluorine-to-carbon (F:C) ratio in the protective polymer film.
  • The reduction in the F:C ratio was markedly more pronounced in sidewall regions directly exposed to ion bombardment.

Cite This Study

Agrawal et al. (2026) studied this question.

synapsesocial.com/papers/6aa27ab158559d80afc737achttps://doi.org/10.1116/6.0005520
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