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March 1, 1996IEEE Electron Device Letters

High speed p-type SiGe modulation-doped field-effect transistors

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Authors

MAM. ArafaIntel (United Kingdom)PFPatrick FayUniversity of Notre DameKIK. IsmailAligarh Muslim University

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Arafa et al. (1996) studied this question.

synapsesocial.com/papers/6aa27b6da25963cecb13a248https://doi.org/10.1109/55.485188
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