Answers are grounded in this paper and cite their sources.
The design and fabrication of a high-power light-emitting diode chip that has an active-region area of 1 mm 2 and emits at a wavelength of 460 nm are described. The chip structure is developed on the basis of numerical simulation and is intended for flip-chip assembly. The use of two-level interconnections for an n -type contact made it possible to obtain an unprecedentedly low series resistance (0.65 Ω) and a high uniformity of pump-current distribution. Light-emitting diodes based on the developed design operate in the continuous-wave mode in a current range of 0–2 A, and their highest emission power is 430 mW.
No takes yet. Share an insight, caveat, or question.
Zakheim et al. (2005) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: