Magnetoresistive random access memory (MRAM) using a magnetic tunnel junction (MTJ) memory cell has the potential to revolutionize both high-density and high-speed memory applications with devices exhibiting non-volatility and good write endurance. This work presents a macromodel for an MTJ that is applicable to an HSPICE circuit simulator. The macromodel is realized as a five-terminal subcircuit that reproduces the characteristics of an MTJ including hysteresis and asteroid curves with thermal variation, and the R–V characteristics.
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Lee et al. (2005) studied this question.
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