Thermal chemical vapor deposition at temperatures as low as 423 K, using Ru3(CO)12 with no accompanying reactive gas, forms pure, uniform, and smooth Ru films on Ta and low-resistivity films on SiO2. A 2.5-nm-thick Ru film fully covers the underlying Ta and the Ru film is thermally stable up to 573 K. Unlike Ta, Ru films exhibit excellent wetting by Cu even when the Ru surface is contaminated with small amounts of oxygen.
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Wang et al. (2004) studied this question.
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