50 GHz bandwidth photodiodes, attaining a compression point of +12 dBm, have been fabricated. The structure design allows an almost complete absorption at 25 µm, corresponding to 0.5 A/W responsivity and gives a polarisation dependence as low as ±0.1 dB. These components have been realised with a low-cost technology including etched waveguide input facet, antireflection coating on wafer and cleaving V-grooves.
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Demiguel et al. (2001) studied this question.
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