The low photon‐energy luminescence from GaAs, occurring at 1.2 eV at 77 °K has been studied under conditions of photoluminescence and cathodoluminescence. The spectral line was observed from a variety of crystals, doped both n‐ and p‐type. It was found that the emission could be induced by annealing an n‐type crystal at 1000 °C for a few minutes. Its efficiency was shown to be sensitive to Fermi level position. Evidence is also presented that the centre giving rise to the 1.2 eV line may be associated with a gallium vacancy.
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B. Tuck (1968) studied this question.
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