Nanoscale surface modifications have been induced using a scanning tunneling microscope in a chalcogenide film GeSb2Te4, which is employed for optical phase change memories. Depressions and expansions appear when the surface is scanned with positive and negative tip voltages under relative humidity higher than ∼50%. It is plausible that the depression and the expansion are produced through electrochemical reactions and anodic oxidation processes.
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Sugawara et al. (2001) studied this question.
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