We present scanning tunneling microscope images that confirm a 13 ML adatom model for the Ga induced 3 × 3 reconstruction of Si(111). We have also identified the bonding site of the Ga adatoms in this structure as the threefold site above second layer Si atoms. The images also show the presence of defects that arise from Si adatom replacement.
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Nogami et al. (1988) studied this question.