1.5 µm GaInAs/GaInAsP graded index separate confinement heterostructure multiple quantum well (GRINSCH-MQW) laser diodes grown by metalorganic chemical vapour deposition (MOCVD)

Very low threshold current density GaInAs/GaInAsP GRINSCH-MQW laser diodes grown by MOCVD emitting at 1.5 µm are demonstrated for the first time. The average threshold current density for 375 µm cavity length devices (200 µm width) was 1.2 kA/cm2, which is the lowest value reported for GaInAs/InP laser diodes.