A parameter extraction method for GaN HEMT empirical large‐signal model including self‐heating and trapping effects

Summary This paper presents an analytical parameter extraction method for empirical large‐signal model of GaN high electron mobility transistors (HEMTs) including self‐heating and trapping effects. Every parameter in the model is extracted in an analytic way. An improved Angelov I–V model specific for GaN HEMTs with 53 parameters is employed. The I–V model parameters are divided into blocks according to their physical meaning, and different blocks are extracted separately by fitting the pulsed I–V transfer characteristic curves of the device at different quiescent bias points. The capacitance model is extracted through mathematical analysis. This method has been implemented in MATLAB (MathWorks, Natick, MA, USA) programming, and good accuracy is obtained between model predictions and experimental results.