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We report on an optical multichannel RAS (Reflectance Anisotropy Spectroscopy) setup capable of measuring at multiple photon energies simultaneously in the spectral range between 1.4 and 5.0 eV at a temporal resolution of up to 30 ms. The setup is specifically designed for time‐resolved studies of surface processes (e.g. epitaxial growth). Its accuracy was evaluated on static surfaces by comparison with RAS spectra acquired using a conventional scanning RAS setup. The performance was demonstrated by studying 2D island growth oscillations during GaAs epitaxy with TMGa and AsH3 or tBAs in metal‐organic vapour phase epitaxy (MOVPE). (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Kaspari et al. (2005) studied this question.
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