Operation of strained-layer (In,Ga)As quantum welllasersprepared on (112)B GaAs substrate

The operation of (In,Ga)As quantum well lasers prepared on [112]-oriented GaAs substrates is reported. Threshold current densities as low as 187 A/cm2 for a 1.57 mm-long device have been obtained under pulsed-mode operation. The demonstration of laser action in a heterostructure grown on the [112]-oriented substrate is important for the design of blue-green light emitters.