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Current oscillations arising from voltage-controlled negative differential resistivity are observed in optically pumped semi-insulating InP at low temperature. The presence of high-field domains sweeping through the sample are detected using photorefractive four-wave mixing. Direct evidence of the role of defects in these current oscillations is presented using deep-level photodiffractive spectroscopy. A deep hole trap with an energy Ev +85 meV is observed. The current oscillations occur only when this defect level is partially occupied.
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Nolte et al. (1990) studied this question.
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