A vertical-cavity surface-emitting laser operating at 1.55 µm has been demonstrated by CW photopumping up to 260 K. The structure consists of an InAlGaAs/InAlAs bottom mirror grown on InP substrate, a 2λ thick active region which has a periodic gain structure with 27 InAlGaAs/InGaAs quantum wells, and an SiO2/TiO2 dielectric top mirror. The input threshold power density has a minimum value of 3.4 kW/cm2 at 220 K.
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Baek et al. (1999) studied this question.
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