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The spectral and temperature dependences of the quantum yield of energy transfer to a luminescent detector by an exciton are studied in SiO2. The results obtained show, that in addition to the “hot” exciton migration there is a diffusion of the relaxed exciton. The exciton structure of SiO2, consists of three states, a self‐trapped exciton, a relaxed exciton, and a resonant exciton.
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A.N. Trukhin (1980) studied this question.
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