The aim of this paper is to characterize and to model the behavior of Carbon NanoTube Field Effect Transistors (CNTFETs) operating in sub-threshold region for low power applications. In particular we refer to Schottky Barrier (SB) CNTFETs, because these devices have a better performance when they operate in sub-threshold region. In this way it is possible to evaluate the noise margin and output voltage swing, necessary to digital circuits design.
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Marani et al. (2015) studied this question.
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