A direct current model of carbon nanotube field effect transistors for computer-aided design applications is proposed. The main objective is to obtain a very good agreement between measured and simulated I–V curves through a best-fitting procedure, particularly in the knee and saturation regions. To verify the accuracy of the model, the results have been compared with those of experimental data and of a numerical model available online, obtaining a negligible relative error in both the cases. The proposed model can be easily implemented in an electrical simulator, and the computational time is very short.
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Marani et al. (2011) studied this question.
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