The internal charge versus phosphor field (Q–Fp) technique is proposed as a method for characterization of the electrical properties of alternating-current thin-film electroluminescent (ACTFEL) devices. Q–Fp analysis provides direct information about the internal behavior of the ACTFEL device. The steady-state field and internal conduction, polarization, leakage, and relaxation charges may be readily deduced from a Q–Fp plot.
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Abu-Dayah et al. (1993) studied this question.
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