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In the present letter we report the epitaxial growth of 9000-Å-thick InSb on a Si(001) surface via In(4×3) reconstruction by molecular beam epitaxy. The growth was monitored in situ using RHEED, Auger electron spectroscopy, scanning tunneling microscopy and the exsitu characterization was done using X-ray diffraction, atomic force microscopy, and optical microscopy. The heteroepitaxy of InSb on Si(001) surface is achieved despite the presence of a large lattice mismatch (over 19%) by incorporating a 0.5ML In(4×3) reconstruction at the InSb/Si interface. Based on these results a model for the interface formation is developed.
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Atoji et al. (1998) studied this question.
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