Interface formation and growth of InSb on Si(100)

High-energy electron diffraction, Auger spectroscopy, photoemission, and x-ray diffraction were used to study the interface and subsequent growth of InSb on vicinal (4^∘{} off) and on-axis Si(100). During the initial stages of molecular-beam epitaxy at 410 ^∘{}C, we examined the In, Sb, and Si core levels as a function of In and Sb coverage and deposition order. Based on these results, a model for interface formation is developed. Thicker coverage results of coevaporated InSb are discussed in light of the interfacial analyses.