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February 1, 1987Japanese Journal of Applied Physics

Initial Stage and Domain Structure of GaAs Grown on Si(100) by Molecular Beam Epitaxy

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Authors

MKMitsuo KawabeNational Institute for Materials ScienceTUToshio UedaKyoto UniversityHTHidetoshi TakasugiUniversity of Tsukuba

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Kawabe et al. (1987) studied this question.

synapsesocial.com/papers/6a6f731626770c2b8ddffe72https://doi.org/10.1143/jjap.26.l114
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Symmetric arsenic dimers on the Si(100) surface1986 · 226 citations
  2. 2Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy1985 · 94 citations
  3. 3Si(100) Surface Reconstruction: Spectroscopic Selection of a Structural Model1975 · 99 citations
  4. 4Material properties of high-quality GaAs epitaxial layers grown on Si substrates1986 · 271 citations
  5. 5Molecular beam epitaxy of GaAs and AlGaAs on Si1984 · 73 citations