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September 1, 1986Journal of Applied Physics

Material properties of high-quality GaAs epitaxial layers grown on Si substrates

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Authors

RFR. FischerAT&T (United States)HMH. Morkoç̌University of Southern CaliforniaDND. A. NeumannAT&T (United States)

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Fischer et al. (1986) studied this question.

synapsesocial.com/papers/6a828f872403b1e95c46f3bbhttps://doi.org/10.1063/1.337253
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Also Consider

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