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November 15, 1984Applied Physics Letters

Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy

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Authors

GMG. MetzePhysical Sciences (United States)HCH. K. ChoiKongju National UniversityBTB-Y. TsaurMIT Lincoln Laboratory

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Metze et al. (1984) studied this question.

synapsesocial.com/papers/6a6f731626770c2b8ddffe7dhttps://doi.org/10.1063/1.95033
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