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This paper reports the first successful MESFET fabrication in GaAs layers grown directly on InP substrates by molecular beam epitaxy (MBE). The fabricated GaAs MESFET's exhibit good I-V curves with complete pinch-off and saturation characteristics. About 100-mS/ mm transconductance was obtained for a 1.2-µm gate length device.
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Asano et al. (1987) studied this question.
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