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December 1, 1984Japanese Journal of Applied Physics

Fabrication of GaAs MESFET Ring Oscillator on MOCVD Grown GaAs/Si(100) Substrate

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Authors

TNT. NonakaOki Electric Industry (Japan)MAMasahiro AkiyamaNational Institute of Technology, Nagano CollegeYKYoshihiro KawaradaOki Electric Industry (Japan)

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Nonaka et al. (1984) studied this question.

synapsesocial.com/papers/6a6f7373439bab0cabc2cc1ehttps://doi.org/10.1143/jjap.23.l919
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