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June 1, 1985Japanese Journal of Applied Physics

Growth of Single Domain GaAs on 2-inch Si(100) Substrate by Molecular Beam Epitaxy

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Authors

SNSeiji NishiTohoku UniversityHIHiroki InomataOki Electric Industry (Japan)MAMasahiro AkiyamaNational Institute of Technology, Nagano College

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Nishi et al. (1985) studied this question.

synapsesocial.com/papers/6a6f7373439bab0cabc2cc1chttps://doi.org/10.1143/jjap.24.l391
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